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| Agilent ATF-53189 Enhancement Mode [1] Pseudomorphic HEMT in SOT 89 Package Data Sheet Features * Single voltage operation * High Linearity and Gain * Low Noise Figure * Excellent uniformity in product specifications * SOT 89 standard package * Point MTTF > 300 years[2] * MSL-1 and lead-free * Tape-and-Reel packaging option available Specifications 2 GHz, 4.0V, 135 mA (Typ.) G S Top View S D Description Agilent Technologies's ATF-53189 is a single-voltage high linearity, low noise E-pHEMT FET packaged in a low cost surface mount SOT89 package. The device is ideal as a high-linearity, low noise, medium-power amplifier. Its operating frequency range is from 50 MHz to 6 GHz. ATF-53189 is ideally suited for Cellular/PCS and WCDMA wireless infrastructure, WLAN, WLL and MMDS application, and general purpose discrete E-pHEMT amplifiers which require medium power and high linearity. All devices are 100% RF and DC tested. Pin Connections and Package Marking S 3GX * 40.0 dBm Output IP3 * 23.0 dBm Output Power at 1dB gain compression * 0.85 dB Noise Figure * 15.5 dB Gain * 46% PAE at P1dB D S G Bottom View * LFOM[3] 12.7 dB Applications * Front-end LNA Q1 and Q2, Driver or Pre-driver Amplifier for Cellular/ PCS and WCDMA wireless infrastructure * Driver Amplifier for WLAN, WLL/ RLL and MMDS applications * General purpose discrete E-pHEMT for other high linearity applications Notes: 1. Enhancement mode technology employs a single positive Vgs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Refer to reliability datasheet for detailed MTTF data. 3. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power. Notes: Package marking provides orientation and identification: "3G" = Device Code "x" = Month code indicates the month of manufacture. D = Drain S = Source G = Gate ATF-53189 Absolute Maximum Ratings[1] Symbol Vds Vgs Vgd Ids Igs Pdiss Pin max. Tch Tstg Parameter Drain-Source Voltage[2] Gate-Source Voltage[2] Gate Drain Voltage[2] Drain Current[2] Gate Current Total Power Dissipation[3] RF Input Power Channel Temperature Storage Temperature Units V V V mA mA W dBm C C Absolute Maximum 7 -5 to 1.0 -5 to 1.0 300 20 1.0 +24 150 -65 to 150 Thermal Resistance[2,4] ch-b = 70C/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Assuming DC quiescent conditions. 3. Board (package belly) temperature TB is 25C. Derate 14.30 mW/C for TB > 80C. 4. Channel-to-board thermal resistance measured using 150C Liquid Crystal Measurement method. ATF-53189 Electrical Specifications TA = 25C, DC bias for RF parameters is Vds = 4.0V and Ids = 135 mA unless otherwise specified. Symbol Vgs Vth Ids Gm Parameters and Test Conditions Operational Gate Voltage Threshold Voltage Drain to Source Current Transconductance Vds = 4.0V, Ids = 135 mA Vds = 4.0V, Ids = 8 mA Vds = 4.0V, Vgs = 0V Vds = 4.0V, Gm = Ids/Vgs; Vgs = Vgs1 - Vgs2 Vgs1 = 0.6V, Vgs2 = 0.55V Vds = 0V, Vgs = -4V f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz Offset BW = 5 MHz Offset BW = 10 MHz Units V V A mmho Min. -- -- -- -- Typ. 0.65 0.30 3.70 650 Max. -- -- -- -- Igss NF G OIP3 P1dB PAE ACLR Gate Leakage Current Noise Figure Gain [1] Output 3rd Order Intercept Point [1] Output 1dB Compressed[1] Power Added Efficiency Adjacent Channel Leakage Power Ratio [1,2] A dB dB dB dB dBm dBm dBm dBm % % dBc dBc -10.0 -- -- 14.0 -- 36.0 -- -- -- -- -- -- -- -0.34 0.85 0.80 15.5 17.2 40.0 42.0 23.0 21.7 46.0 33.8 -54.0 -64.0 -- -- -- 17.0 -- -- -- -- -- -- -- -- -- Notes: 1. Measurements at 2 GHz obtained using production test board described in Figure 1. 2. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06) - Test Model 1 - Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128) - Freq = 2140 MHz - Pin = -8 dBm - Channel Integrate Bandwidth = 3.84 MHz 2 Input Input Matching Circuit _mag=0.74 _ang=-112.4 DUT Output Matching Circuit _mag=0.40 _ang=-120.0 Output Figure 1. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB, PAE and ACLR measurements. This circuit achieves a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements. Product Consistency Distribution Charts [1,2] 150 150 Stdev=0.86 120 Stdev=0.08 120 FREQUENCY FREQUENCY 90 90 -3 Std 60 +3 Std -3 Std 60 +3 Std 30 30 0 36 37 38 39 40 41 42 43 44 45 OIP3 (dBm) 0 .5 .6 .7 .8 .9 1 1.1 NF (dBm) Figure 2. OIP3 @ 2 GHz, 4V, 135 mA. LSL = 36 dBm, Nominal = 40 dBm. 150 Figure 3. NF @ 2 GHz, 4V, 135 mA. USL = 1.30 dBm, Nominal = 0.84 dBm. 150 Stdev=0.22 120 FREQUENCY FREQUENCY Stdev=1.14 120 90 90 -3 Std 60 +3 Std -3 Std 60 +3 Std 30 30 0 14.5 15 15.5 Gain (dB) 16 16.5 0 19 20 21 22 23 24 25 26 P1dB (dBm) Figure 4. Gain @ 2 GHz, 4V, 135 mA. LSL = 14 dBm, Nominal = 15.5 dBm, USL = 17 dBm. Figure 5. P1dB @ 2 GHz, 4V, 135 mA. Nominal = 23 dBm. Notes: 1. Distribution data sample size is 500 samples taken from 3 different wafers. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 2. Measurements are made on production test board, which represents a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements. 3 Gamma Load and Source at Optimum OIP3 Tuning Conditions The device's optimum OIP3 measurements were determined using a Maury Load Pull System at 4.0V, 135 mA quiesent bias. Typical Gammas at Optimum OIP3 [1] Freq (GHz) 0.9 2.0 3.9 5.8 Gamma Source Mag Ang (deg) 0.8179 0.7411 0.6875 0.5204 -143.28 -112.36 -94.23 -75.91 Gamma Load Mag Ang (deg) 0.0721 0.4080 0.4478 0.3525 124.08 119.91 174.74 -120.13 OIP3 (dBm) 42.0 41.6 41.3 36.9 Gain (dB) 17.2 15.6 11.2 5.6 P1dB (dBm) 21.7 23.4 23.1 22.4 PAE (%) 33.8 44.2 41.4 25.7 Note: 1. Typical describes additional product performance information that is not covered by the product warranty. 400 350 300 Ids (mA) 0.9V 0.8V 250 200 150 100 50 0 0 1 2 3 4 5 0.6V 0.5V 0.7V 6 7 Vds (V) Figure 6. Typical IV Curve. 4 ATF-53189 Typical Performance Curves (at 25C unless specified otherwise) Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA. 45 45 45 40 40 40 OIP3 (dBm) OIP3 (dBm) 30 3V 4V 5V 90 105 120 135 150 165 180 30 3V 4V 5V 90 105 120 135 150 165 180 OIP3 (dBm) 35 35 35 30 3V 4V 5V 90 105 120 135 150 165 180 25 25 25 20 75 20 75 20 75 Ids (mA) Ids (mA) Ids (mA) Figure 7. OIP3 vs. Ids and Vds at 900 MHz. Figure 8. OIP3 vs. Ids and Vds at 2 GHz. Figure 9. OIP3 vs. Ids and Vds at 3.9 GHz. 19 18 17 19 18 17 14 12 10 GAIN (dB) GAIN (dB) 16 15 14 13 12 75 3V 4V 5V 90 105 120 135 150 165 180 16 15 14 13 12 75 3V 4V 5V 90 105 120 135 150 165 180 GAIN (dB) 8 6 4 2 0 75 3V 4V 5V 90 105 120 135 150 165 180 Ids (mA) Ids (mA) Ids (mA) Figure 10. Small Signal Gain vs. Ids and Vds at 900 MHz. 40 Figure 11. Small Signal Gain vs. Ids and Vds at 2 GHz. 8 Figure 12. Small Signal Gain vs. Ids and Vds at 3.9 GHz. 30 25 Gain_3V Pout_3V PAE_3V 60 50 40 30 20 10 0 -10 -6 -2 Pin (dBm) 2 6 10 GAIN (dB) & Pout (dBm) 35 6 20 15 10 5 0 -14 OIP3 (dBm) GAIN (dB) 30 4 25 3V 4V 5V 90 105 120 135 150 165 180 2 3V 4V 5V 90 105 120 135 150 165 180 20 75 0 75 Ids (mA) Ids (mA) Figure 13. OIP3 vs. Ids and Vds at 5.8 GHz. Figure 14. Small Signal Gain vs. Ids and Vds at 5.8 GHz. Figure 15. Small Signal Gain/Pout/PAE vs. Pin at Vds=3V and Freq = 900 MHz. Note: Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive. 5 PAE (%) ATF-53189 Typical Performance Curves (at 25C unless specified otherwise), continued Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA. 30 25 Gain_4V Pout_4V PAE_4V 60 50 30 25 Gain_5V Pout_5V PAE_5V 60 50 40 30 25 Gain_3V Pout_3V PAE_3V 60 50 40 30 20 10 0 -6 -2 2 Pin (dBm) 6 10 14 GAIN (dB) & Pout (dBm) GAIN (dB) & Pout (dBm) 20 15 10 5 0 -14 40 20 15 10 5 0 -14 GAIN (dB) & Pout (dBm) 20 15 10 5 0 -10 PAE (%) PAE (%) 30 20 10 0 -10 -6 -2 Pin (dBm) 2 6 10 30 20 10 0 -10 -6 -2 Pin (dBm) 2 6 10 Figure 16. Small Signal Gain/Pout/PAE vs. Pin at Vds=4V and Freq = 900 MHz. 30 25 Gain_4V Pout_4V PAE_4V 60 50 Figure 17. Small Signal Gain/Pout/PAE vs. Pin at Vds=5V and Freq = 900 MHz. 30 25 Gain_5V Pout_5V PAE_5V 60 50 Figure 18. Small Signal Gain/Pout/PAE vs. Pin at Vds=3V and Freq = 2 GHz. 30 25 Gain_3V Pout_3V PAE_3V 60 50 40 30 20 10 0 -6 -2 2 6 10 14 18 Pin (dBm) GAIN (dB) & Pout (dBm) GAIN (dB) & Pout (dBm) GAIN (dB) & Pout (dBm) 20 15 10 5 0 -10 40 20 15 10 5 0 -10 40 20 15 10 5 0 -10 PAE (%) 30 20 10 0 -6 -2 2 Pin (dBm) 6 10 14 30 20 10 0 -6 -2 2 Pin (dBm) 6 10 14 PAE (%) Figure 19. Small Signal Gain/Pout/PAE vs. Pin at Vds=4V and Freq = 2 GHz. 30 25 Gain_4V Pout_4V PAE_4V 60 50 Figure 20. Small Signal Gain/Pout/PAE vs. Pin at Vds=5V and Freq = 2 GHz. 30 25 Gain_5V Pout_5V PAE_5V 60 50 40 Figure 21. Small Signal Gain/Pout/PAE vs. Pin at Vds=3V and Freq = 3.9 GHz. 30 25 Gain_3V Pout_3V PAE_3V 30 25 20 15 10 5 0 -6 -2 2 6 10 14 18 22 Pin (dBm) GAIN (dB) & Pout (dBm) GAIN (dB) & Pout (dBm) 20 15 10 5 0 -10 40 20 15 10 5 0 -10 GAIN (dB) & Pout (dBm) 20 15 10 5 0 PAE (%) PAE (%) 30 20 10 0 -6 -2 2 6 10 14 18 Pin (dBm) 30 20 10 0 -6 -2 2 6 10 14 18 Pin (dBm) Figure 22. Small Signal Gain/Pout/PAE vs. Pin at Vds=4V and Freq = 3.9 GHz. Figure 21. Small Signal Gain/Pout/PAE vs. Pin at Vds=5V and Freq = 3.9 GHz. Figure 24. Small Signal Gain/Pout/PAE vs. Pin at Vds=3V and Freq = 5.8 GHz. Note: Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive. 6 PAE (%) PAE (%) PAE (%) ATF-53189 Typical Performance Curves (at 25C unless specified otherwise), continued Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA. 30 25 GAIN (dB) & Pout (dBm) 30 Gain_3V Pout_3V PAE_3V 25 20 PAE (%) GAIN (dB) & Pout (dBm) 30 25 20 15 10 5 0 -6 -2 2 6 10 14 18 22 Pin (dBm) Gain_5V Pout_5V PAE_5V 30 25 20 15 10 5 0 PAE (%) 20 15 10 5 0 -6 -2 2 6 10 14 18 22 Pin (dBm) 15 10 5 0 Figure 25. Small Signal Gain/Pout/PAE vs. Pin at Vds = 4V and Freq = 5.8 GHz. Figure 26. Small Signal Gain/Pout/PAE vs. Pin at Vds = 5V and Freq = 5.8 GHz. ATF-53189 Typical Performance Curves, continued Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA, Over Temperature and Frequency 46 44 42 OIP3 (dBm) GAIN (dB) 18 16 14 12 10 10 8 6 3.5 4.5 5.5 6.5 4 0.5 1.5 -40C 25C 80C 2.5 3.5 4.5 5.5 6.5 40 38 36 34 0.5 -40C 25C 80C 1.5 2.5 FREQUENCY (GHz) FREQUENCY (GHz) Figure 27. OIP3 vs. Temperature and Frequency at optimum OIP3. 50 45 40 Figure 28. Gain vs. Temperature and Frequency at optimum OIP3. 25 24 P1dB (dBm) PAE (%) 23 35 30 25 20 0.5 -40C 25C 80C 1.5 2.5 3.5 4.5 5.5 6.5 22 -40C 25C 80C 1.5 2.5 3.5 4.5 5.5 6.5 21 20 0.5 FREQUENCY (GHz) FREQUENCY (GHz) Figure 29. PAE vs. Temperature and Frequency at optimum OIP3. Figure 30. P1dB vs. Temperature and Frequency at optimum OIP3. 7 ATF-53189 Typical Scattering and Noise Parameters at 25C, VDS = 4.0V, IDS = 180 mA Freq (GHz) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.776 0.798 0.818 0.832 0.835 0.840 0.842 0.843 0.844 0.847 0.847 0.847 0.843 0.841 0.851 0.862 0.882 0.903 0.939 0.956 0.940 0.948 0.942 0.920 0.959 0.952 0.943 0.956 0.959 0.918 Ang. -48.1 -84.7 -110.2 -128.2 -151.9 -160.3 -166.9 -172.2 -176.9 178.8 161.9 147.6 133.8 119.8 110.0 100.1 80.4 60.7 44.0 31.8 23.2 13.6 2.6 -4.3 -15.4 -20.1 -21.0 -24.2 -31.9 -43.5 (dB) 32.22 30.66 28.96 27.34 24.82 23.41 22.20 21.13 20.19 19.33 16.01 13.66 11.88 10.55 9.64 8.63 6.17 2.71 0.23 -2.09 -4.64 -6.76 -8.68 -10.31 -12.25 -14.29 -15.49 -16.19 -15.97 -15.70 S21 Mag. 40.839 34.138 28.059 23.278 17.424 14.811 12.876 11.394 10.225 9.256 6.316 4.818 3.928 3.369 3.036 2.702 2.034 1.367 1.027 0.786 0.586 0.459 0.368 0.305 0.244 0.193 0.168 0.155 0.159 0.164 Ang. 154.1 135.6 121.7 111.2 100.1 94.8 90.2 86.3 82.7 79.3 64.7 51.4 38.4 25.2 14.5 3.7 -17.9 -39.4 -59.4 -77.8 -94.2 -110.0 -126.9 -141.2 -161.1 -171.7 179.4 169.6 155.5 137.8 (dB) -38.42 -33.98 -32.04 -31.37 -31.70 -31.70 -31.37 -31.37 -31.06 -31.06 -30.17 -29.37 -28.64 -27.90 -27.64 -27.38 -26.89 -26.42 -27.13 -27.74 -29.12 -30.75 -33.98 -38.42 -35.39 -35.39 -35.92 -33.98 -31.37 -28.40 S12 Mag. 0.012 0.020 0.025 0.027 0.026 0.026 0.027 0.027 0.028 0.028 0.031 0.034 0.037 0.040 0.042 0.043 0.045 0.048 0.044 0.041 0.035 0.029 0.020 0.012 0.017 0.017 0.016 0.020 0.027 0.038 Ang. 65.5 50.5 39.4 31.7 23.3 20.5 18.6 17.5 16.5 15.7 13.4 11.0 7.6 2.5 -2.4 -7.3 -17.2 -27.0 -37.6 -48.7 -61.5 -79.0 -117.0 -172.6 104.4 73.2 82.9 81.5 87.0 78.1 Mag. 0.428 0.411 0.396 0.384 0.397 0.401 0.403 0.402 0.400 0.398 0.389 0.377 0.367 0.365 0.385 0.405 0.446 0.486 0.544 0.607 0.669 0.721 0.756 0.784 0.794 0.812 0.847 0.852 0.865 0.847 S22 Ang. -39.3 -71.3 -94.8 -111.6 -146.6 -153.7 -159.0 -163.3 -166.8 -169.8 178.4 169.3 160.5 152.5 143.8 135.2 117.8 100.5 87.1 72.6 57.9 45.5 35.1 24.8 15.1 7.6 1.3 -2.9 -7.8 -14.7 MSG/MAG dB 35.32 32.32 30.50 29.36 28.26 27.56 26.78 26.25 25.63 25.19 23.09 21.51 20.26 17.00 16.30 15.51 13.54 10.76 10.47 9.96 6.72 6.06 4.78 2.35 3.68 0.77 -0.29 0.29 1.55 -2.03 Freq GHz 0.5 0.9 1.0 1.5 2.0 2.4 3.0 3.5 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 Fmin dB 0.65 0.76 0.79 0.86 0.94 1.00 1.10 1.17 1.23 1.41 1.53 1.56 1.72 1.87 2.03 2.18 Gamma Opt Mag Ang 0.394 163.6 0.417 172.4 0.423 175.3 0.465 -165.4 0.509 -147.7 0.545 -134.6 0.600 -116.7 0.645 -103.3 0.681 -93.4 0.777 -70.0 0.840 -56.1 0.855 -52.9 0.920 -39.0 0.970 -27.5 0.993 -19.1 0.997 -7.5 Rn/50 0.50 0.60 0.70 0.90 1.00 1.00 1.10 1.10 1.20 1.20 1.20 1.30 1.30 1.40 1.50 1.60 Ga dB 25.82 21.83 21.71 18.70 17.63 16.45 14.90 13.53 12.79 11.35 10.31 10.38 9.79 7.91 6.11 4.56 40 MSG 30 MSG/MAG & |S21|2 (dB) 20 MAG 10 S21 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 31. MSG/MAG & |S21|2 vs. and Frequency at 4.0V/180 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 8 ATF-53189 Typical Scattering and Noise Parameters at 25C, VDS = 4.0V, IDS = 135 mA Freq (GHz) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 Mag. 0.916 0.897 0.885 0.878 0.859 0.857 0.855 0.854 0.852 0.854 0.851 0.850 0.846 0.844 0.854 0.863 0.883 0.902 0.939 0.956 0.940 0.948 0.942 0.920 0.959 0.951 0.942 0.956 0.958 0.920 S11 Ang. -47.6 -83.9 -109.5 -127.5 -151.3 -159.9 -166.5 -171.9 -176.6 179.1 162.1 147.7 133.9 119.8 110.0 100.2 80.5 60.8 44.1 31.8 23.2 13.6 2.6 -4.2 -15.4 -20.0 -21.1 -24.2 -31.8 -43.5 (dB) 32.62 30.90 29.07 27.36 24.75 23.31 22.08 21.00 20.06 19.18 15.84 13.49 11.71 10.37 9.45 8.42 5.90 2.33 0.04 -2.28 -4.84 -6.97 -8.87 -10.54 -12.43 -14.52 -15.70 -16.54 -16.19 -15.86 S21 Mag. 42.775 35.086 28.400 23.322 17.286 14.647 12.703 11.225 10.065 9.101 6.197 4.726 3.851 3.301 2.968 2.636 1.972 1.308 1.005 0.769 0.573 0.448 0.360 0.297 0.239 0.188 0.164 0.149 0.155 0.161 Ang. 152.6 133.4 119.5 109.2 98.2 93.1 88.7 84.9 81.5 78.2 63.9 50.7 37.7 24.6 13.9 3.1 -18.5 -40.0 -60.0 -78.3 -95.0 -110.5 -127.7 -141.8 -161.9 -172.9 178.7 167.8 154.1 136.9 (dB) -37.72 -33.15 -31.37 -30.75 -31.37 -31.06 -31.06 -30.75 -30.75 -30.75 -29.90 -29.37 -28.40 -27.91 -27.67 -27.44 -26.99 -26.56 -27.13 -27.74 -29.12 -30.75 -33.98 -38.42 -34.89 -35.39 -35.39 -33.98 -31.37 -28.40 S12 Mag. 0.013 0.022 0.027 0.029 0.027 0.028 0.028 0.029 0.029 0.029 0.032 0.034 0.038 0.040 0.041 0.042 0.045 0.047 0.044 0.041 0.035 0.029 0.020 0.012 0.018 0.017 0.017 0.020 0.027 0.038 Ang. 66.7 49.5 37.8 29.9 21.3 18.6 16.9 15.6 14.6 13.9 11.3 9.0 5.7 0.8 -4.0 -8.7 -18.1 -27.6 -38.6 -49.6 -62.1 -80.0 -118.6 -173.3 105.0 74.0 84.5 82.4 87.3 78.5 Mag. 0.458 0.430 0.407 0.390 0.399 0.401 0.402 0.400 0.398 0.396 0.386 0.374 0.364 0.362 0.382 0.401 0.441 0.480 0.542 0.605 0.668 0.721 0.757 0.784 0.794 0.812 0.847 0.853 0.866 0.848 S22 Ang. -40.7 -73.3 -96.8 -113.4 -148.1 -155.0 -160.1 -164.3 -167.7 -170.6 178.0 169.0 160.4 152.4 143.7 135.0 117.6 100.2 87.3 72.8 58.1 45.6 35.2 24.8 15.1 7.7 1.4 -2.9 -7.8 -14.7 MSG/MAG dB 35.17 32.03 30.22 29.05 28.06 27.19 26.57 25.88 25.40 24.97 22.87 21.43 20.06 16.96 16.21 15.36 13.28 10.33 10.33 9.82 6.56 5.89 4.64 2.11 3.53 0.44 -0.56 -0.05 1.18 -2.06 40 Freq GHz 0.5 0.9 1.0 1.5 2.0 2.4 3.0 3.5 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 Fmin dB 0.30 0.41 0.44 0.53 0.62 0.69 0.80 0.89 0.96 1.16 1.31 1.34 1.52 1.71 1.89 2.07 Gamma Opt Mag Ang 0.162 150.8 0.291 161.3 0.302 164.2 0.369 -174.2 0.433 -154.6 0.484 -140.2 0.556 -120.6 0.613 -106.1 0.656 -95.6 0.764 -71.0 0.832 -56.6 0.848 -53.4 0.914 -39.3 0.963 -27.9 0.991 -18.2 0.998 -9.2 Rn/50 0.50 0.60 0.60 0.80 1.00 1.00 1.10 1.10 1.10 1.20 1.20 1.20 1.30 1.30 1.40 1.60 Ga dB 26.27 22.12 22.02 18.95 17.05 15.87 14.63 13.21 12.94 11.19 10.26 10.04 9.64 8.68 6.57 4.51 MSG 30 MSG/MAG & |S21|2 (dB) 20 MAG 10 S21 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 32. MSG/MAG & |S21|2 vs. and Frequency at 4.0V/135 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 9 ATF-53189 Typical Scattering and Noise Parameters at 25C, VDS = 4.0V, IDS = 75 mA Freq (GHz) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 Mag. 0.926 0.891 0.882 0.879 0.885 0.886 0.886 0.886 0.885 0.887 0.884 0.884 0.880 0.875 0.882 0.889 0.903 0.917 0.947 0.959 0.941 0.946 0.936 0.914 0.951 0.948 0.937 0.949 0.947 0.906 S11 Ang. -80.9 -121.5 -142.5 -155.4 -169.7 -175.4 -180.0 176.1 172.5 169.3 155.1 142.1 129.1 115.5 106.2 96.8 78.1 59.4 43.5 31.7 23.4 14.1 3.1 -3.7 -14.9 -19.8 -21.1 -24.5 -32.9 -45.1 (dB) 33.47 29.88 27.03 24.79 21.67 20.13 18.83 17.72 16.76 15.86 12.49 10.13 8.36 7.03 6.10 5.06 2.52 -1.09 -3.64 -6.00 -8.64 -10.69 -12.54 -14.24 -16.25 -18.34 -19.02 -19.66 -18.56 -17.79 S21 Mag. 47.170 31.192 22.457 17.360 12.120 10.145 8.743 7.695 6.883 6.209 4.212 3.210 2.618 2.246 2.018 1.791 1.337 0.882 0.658 0.501 0.370 0.292 0.236 0.194 0.154 0.121 0.112 0.104 0.118 0.129 Ang. 135.8 114.3 102.7 94.8 88.9 85.0 81.6 78.4 75.3 72.4 58.8 45.7 32.5 18.9 8.1 -2.8 -24.5 -46.2 -65.5 -83.3 -98.9 -114.3 -131.4 -146.0 -166.9 -175.3 176.1 167.9 154.7 138.1 (dB) -35.92 -33.15 -32.04 -31.70 -32.77 -32.40 -32.40 -32.04 -31.70 -31.70 -30.46 -29.12 -27.96 -27.08 -26.80 -26.54 -26.04 -25.56 -26.20 -26.74 -28.40 -29.63 -33.15 -37.72 -37.72 -39.17 -40.92 -43.10 -37.72 -33.56 S12 Mag. 0.016 0.022 0.025 0.026 0.023 0.024 0.024 0.025 0.026 0.026 0.030 0.035 0.040 0.044 0.046 0.047 0.050 0.053 0.049 0.046 0.038 0.033 0.022 0.013 0.013 0.011 0.009 0.007 0.013 0.021 Ang. 51.6 34.6 26.7 22.2 19.7 19.0 18.6 18.5 18.4 18.3 17.8 15.6 11.2 4.9 -1.1 -7.1 -19.0 -31.0 -42.2 -53.9 -65.8 -82.9 -116.4 -159.1 104.3 56.9 79.5 74.4 117.9 111.8 Mag. 0.389 0.447 0.471 0.482 0.551 0.555 0.557 0.557 0.555 0.554 0.548 0.538 0.532 0.532 0.549 0.567 0.603 0.638 0.681 0.725 0.770 0.805 0.826 0.843 0.843 0.850 0.877 0.878 0.887 0.862 S22 Ang. -96.0 -131.4 -147.6 -157.0 -172.5 -176.0 -178.8 178.7 176.5 174.4 165.1 156.3 147.4 139.0 130.5 122.0 105.1 88.1 75.1 61.6 48.2 36.9 27.2 17.2 8.0 1.2 -4.2 -8.2 -13.1 -21.1 MSG/MAG dB 34.70 31.52 29.53 28.25 27.22 26.26 25.61 24.88 24.23 23.78 21.47 19.17 16.16 14.43 13.76 12.99 11.06 8.23 7.89 7.19 4.00 3.26 1.71 -0.74 -0.35 -2.88 -3.46 -3.21 -1.56 -4.11 40 Freq GHz 0.5 0.9 1.0 1.5 2.0 2.4 3.0 3.5 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 Fmin dB 0.32 0.41 0.43 0.49 0.56 0.61 0.69 0.75 0.81 0.95 1.05 1.08 1.21 1.34 1.47 1.60 Gamma Opt Mag Ang 0.175 127.6 0.224 143.8 0.235 148.3 0.306 173.6 0.375 -163.6 0.428 -147.2 0.507 -125.3 0.569 -109.3 0.617 -97.9 0.738 -72.0 0.814 -57.4 0.831 -54.2 0.907 -40.5 0.961 -29.3 0.992 -19.3 0.996 -8.9 Rn/50 0.50 0.60 0.60 0.70 0.90 1.00 1.10 1.10 1.10 1.10 1.20 1.20 1.20 1.20 1.30 1.40 Ga dB 26.45 21.98 21.50 18.55 16.33 15.18 13.86 12.68 11.58 10.81 10.64 9.97 9.25 7.78 6.96 4.46 MSG 30 MSG/MAG & |S21|2 (dB) 20 10 0 -10 -20 -30 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) MAG S21 Figure 33. MSG/MAG & |S21|2 vs. and Frequency at 4.0V/75 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 10 ATF-53189 Typical Scattering and Noise Parameters at 25C, VDS = 5.0V, IDS = 135 mA Freq (GHz) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.903 0.889 0.879 0.874 0.857 0.856 0.854 0.853 0.852 0.854 0.852 0.851 0.846 0.844 0.854 0.864 0.883 0.903 0.939 0.957 0.941 0.948 0.941 0.919 0.958 0.951 0.942 0.956 0.957 0.917 Ang. -47.8 -84.2 -109.8 -127.8 -151.5 -160.0 -166.6 -172.0 -176.7 179.1 162.0 147.6 133.8 119.8 110.0 100.1 80.3 60.6 44.0 31.7 23.0 13.6 2.5 -4.4 -15.5 -20.1 -21.1 -24.2 -31.9 -43.6 (dB) 32.47 30.76 28.93 27.22 24.64 23.20 21.97 20.89 19.94 19.07 15.73 13.37 11.59 10.26 9.35 8.34 5.87 2.40 -0.10 -2.43 -5.01 -7.11 -9.04 -10.75 -12.73 -14.75 -15.92 -16.65 -16.54 -16.14 S21 Mag. 42.048 34.523 27.960 22.970 17.060 14.454 12.541 11.079 9.935 8.984 6.117 4.662 3.798 3.257 2.934 2.611 1.965 1.319 0.989 0.756 0.562 0.441 0.353 0.290 0.231 0.183 0.160 0.147 0.149 0.156 Ang. 152.7 133.5 119.5 109.2 98.2 93.1 88.7 84.9 81.4 78.1 63.7 50.4 37.4 24.2 13.4 2.5 -19.1 -40.8 -60.9 -79.4 -96.1 -112.0 -129.2 -143.9 -163.8 -174.6 175.9 166.0 152.8 134.6 (dB) -37.72 -33.15 -31.37 -30.75 -31.37 -31.06 -31.06 -30.75 -30.75 -30.46 -29.90 -29.37 -28.64 -27.91 -27.68 -27.45 -27.01 -26.60 -27.13 -27.74 -29.12 -30.75 -33.98 -38.42 -34.89 -35.39 -35.39 -33.98 -31.37 -28.40 S12 Mag. 0.013 0.022 0.027 0.029 0.027 0.028 0.028 0.029 0.029 0.030 0.032 0.034 0.037 0.040 0.041 0.042 0.045 0.047 0.044 0.041 0.035 0.029 0.020 0.012 0.018 0.017 0.017 0.020 0.027 0.038 Ang. 66.6 49.3 37.6 29.8 21.2 18.5 16.7 15.4 14.3 13.6 11.0 8.7 5.3 0.6 -4.1 -8.8 -18.3 -27.7 -37.9 -49.0 -61.5 -79.3 -117.6 -172.8 105.3 74.4 84.0 81.8 87.0 77.6 Mag. 0.466 0.432 0.404 0.385 0.388 0.389 0.390 0.388 0.386 0.383 0.373 0.361 0.352 0.350 0.371 0.392 0.433 0.475 0.536 0.601 0.666 0.720 0.757 0.785 0.796 0.814 0.849 0.855 0.868 0.851 S22 Ang. -39.6 -71.6 -94.7 -111.3 -146.6 -153.7 -158.9 -163.2 -166.6 -169.5 179.1 170.2 161.7 153.9 145.2 136.6 119.2 101.9 88.4 73.8 58.9 46.2 35.7 25.2 15.4 7.9 1.6 -2.7 -7.7 -14.6 MSG/MAG dB 35.10 31.96 30.15 28.99 28.01 27.13 26.51 25.82 25.35 24.76 22.81 21.37 20.11 16.85 16.14 15.32 13.31 10.48 10.20 9.82 6.47 5.78 4.40 1.86 3.10 0.23 -0.76 -0.15 0.72 -2.48 40 Freq GHz 0.5 0.9 1.0 1.5 2.0 2.4 3.0 3.5 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 Fmin dB 0.36 0.46 0.49 0.59 0.69 0.77 0.88 0.98 1.06 1.28 1.44 1.48 1.68 1.88 2.08 2.28 Gamma Opt Mag Ang 0.266 149.9 0.315 162.4 0.327 165.6 0.388 -172.7 0.448 -153.0 0.495 -138.6 0.563 -116.3 0.617 -104.9 0.659 -94.6 0.764 -70.5 0.830 -56.5 0.845 -53.4 0.912 -39.7 0.960 -28.3 0.988 -18.3 0.994 -8.5 Rn/50 0.50 0.60 0.60 0.80 1.00 1.00 1.10 1.10 1.10 1.10 1.10 1.10 1.20 1.20 1.30 1.30 Ga dB 26.51 22.79 22.09 18.92 17.04 15.87 14.50 13.11 12.48 11.19 10.10 10.08 9.39 8.78 8.05 4.74 MSG 30 MSG/MAG & |S21|2 (dB) 20 MAG 10 S21 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 34. MSG/MAG & |S21|2 vs. and Frequency at 5.0V/135 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 11 ATF-53189 Typical Scattering and Noise Parameters at 25C, VDS = 3.0V, IDS = 135 mA Freq (GHz) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 Mag. 0.925 0.904 0.889 0.882 0.861 0.859 0.856 0.855 0.853 0.855 0.851 0.851 0.845 0.843 0.853 0.862 0.882 0.901 0.938 0.955 0.938 0.946 0.940 0.920 0.958 0.952 0.943 0.955 0.958 0.918 S11 Ang. -47.5 -83.8 -109.3 -127.4 -151.3 -159.8 -166.5 -171.8 -176.7 179.1 162.1 147.6 133.8 119.8 110.0 100.1 80.4 60.7 44.1 31.8 23.1 13.6 2.6 -4.2 -15.5 -20.1 -21.2 -24.2 -31.9 -43.5 (dB) 32.64 30.92 29.08 27.37 24.72 23.28 22.05 20.97 20.02 19.15 15.82 13.47 11.70 10.37 9.46 8.45 5.98 2.52 0.05 -2.26 -4.79 -6.88 -8.78 -10.40 -12.36 -14.38 -15.55 -16.25 -15.97 -15.65 S21 Mag. 42.873 35.157 28.440 23.350 17.223 14.586 12.655 11.183 10.027 9.067 6.179 4.713 3.846 3.299 2.972 2.645 1.990 1.336 1.006 0.771 0.576 0.453 0.364 0.302 0.241 0.191 0.167 0.154 0.159 0.165 Ang. 152.7 133.4 119.5 109.2 98.3 93.2 88.9 85.2 81.7 78.4 64.3 51.2 38.4 25.4 14.8 4.1 -17.1 -38.4 -58.0 -76.0 -92.2 -107.4 -124.6 -138.3 -157.7 -167.9 -177.0 173.2 159.5 141.4 (dB) -37.72 -33.15 -31.37 -30.46 -31.06 -31.06 -30.75 -30.75 -30.46 -30.46 -29.63 -29.12 -28.18 -27.50 -27.31 -27.12 -26.76 -26.41 -27.13 -27.74 -29.37 -30.75 -33.98 -37.72 -34.89 -35.39 -35.39 -33.98 -31.37 -28.40 S12 Mag. 0.013 0.022 0.027 0.030 0.028 0.028 0.029 0.029 0.030 0.030 0.033 0.035 0.039 0.042 0.043 0.044 0.046 0.048 0.044 0.041 0.034 0.029 0.020 0.013 0.018 0.017 0.017 0.020 0.027 0.038 Ang. 66.6 49.4 37.7 29.8 21.4 18.7 17.0 15.7 14.8 14.0 11.4 8.9 5.0 -0.1 -5.1 -10.2 -20.2 -30.3 -40.8 -51.6 -64.0 -82.0 -121.6 -176.6 105.2 74.2 85.1 83.1 89.0 79.5 Mag. 0.435 0.425 0.416 0.410 0.433 0.437 0.439 0.438 0.436 0.435 0.425 0.413 0.403 0.401 0.419 0.438 0.475 0.512 0.565 0.622 0.681 0.729 0.760 0.785 0.794 0.810 0.844 0.849 0.861 0.843 S22 Ang. -44.0 -78.6 -102.6 -119.1 -151.6 -158.2 -163.0 -167.1 -170.4 -173.3 175.3 166.0 157.1 148.8 140.2 131.6 114.3 97.1 84.0 70.0 55.7 43.6 33.5 23.3 13.8 6.6 0.5 -3.7 -8.5 -15.5 MSG/MAG dB 35.18 32.04 30.23 28.91 27.89 27.17 26.40 25.86 25.24 24.80 22.72 21.29 19.56 17.06 16.29 15.44 13.38 10.55 10.26 9.70 6.52 5.85 4.61 2.31 3.57 0.70 -0.34 0.15 1.48 -1.98 40 Freq GHz 0.5 0.9 1.0 1.5 2.0 2.4 3.0 3.5 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 Fmin dB 0.34 0.43 0.45 0.53 0.61 0.68 0.78 0.86 0.92 1.10 1.24 1.27 1.43 1.60 1.76 1.93 Gamma Opt Mag Ang 0.225 146.2 0.282 157.0 0.296 160.2 0.362 -177.0 0.427 -156.3 0.478 -141.3 0.551 -121.1 0.608 -106.2 0.652 -95.5 0.763 -70.8 0.832 -56.6 0.848 -53.5 0.915 -39.7 0.964 -28.4 0.991 -18.5 0.995 -8.6 Rn/50 0.50 0.60 0.60 0.80 0.90 1.00 1.10 1.10 1.10 1.10 1.10 1.10 1.20 1.20 1.30 1.50 Ga dB 26.30 22.19 22.07 19.00 17.13 15.89 14.59 13.17 12.97 11.22 10.16 9.93 9.57 8.78 7.27 3.39 MSG 30 MSG/MAG & |S21|2 (dB) 20 MAG 10 0 -10 -20 S21 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 35. MSG/MAG & |S21|2 vs. and Frequency at 3.0V/135 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 12 Device Models, PCB Layout and Stencil Device Refer to Agilent's Web Site: www.agilent.com/view/rf Ordering Information Part Number ATF-52189-TR1 ATF-52189-BLK No. of Devices 3000 100 Container 13" Reel Anti-static bag SOT 89 Package Dimensions D A D1 C H L E E1 #1 #2 #3 B B1 e #3 e1 BOTTOM #2 #1 COMMON DIMENSIONS Millimeters SYMBOL A B B1 C D D1 E E1 e e1 H L MIN. 1.40 0.44 0.36 0.35 4.40 1.62 2.30 2.13 1.50 BSC 3.00 BSC 3.95 0.90 NOM. 1.50 0.50 0.42 0.40 4.50 1.73 2.50 2.20 1.50 BSC 3.00 BSC 4.10 1.10 MAX. 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 1.50 BSC 3.00 BSC 4.25 1.20 DIMENSIONS Inches MIN. 0.055 0.017 0.014 0.014 0.173 0.064 0.090 0.084 0.059 BSC 0.118 BSC 0.155 0.035 NOM. 0.059 0.0195 0.0165 0.016 0.177 0.068 0.096 0.087 0.059 BSC 0.188 BSC 0.161 0.038 MAX. 0.063 0.022 0.019 0.017 0.181 0.072 0.102 0.090 0.059 BSC 0.188 BSC 0.167 0.047 Notes: 1. Dimensioning and tolerancing per ANSI.Y14.5M-1982 2. Controlling dimension: Millimeter convertions to inches are not necessarily exact. 3. Dimension B1, 2 places. 13 Device Orientation REEL 3GX CARRIER TAPE USER FEED DIRECTION COVER TAPE 3GX 3GX 3GX Tape Dimensions 1.500.10 (0.059+0.004) 8.000.10 (0.3150.004) 4.000.10 (0.1570.004) 2.000.05 (0.0690.004) 1.750.10 (0.0690.004) + 12.00.30-0.10 (0.472+0.012-0.004) + 5.500.05 (0.2170.002) 1.500.25 (0.059+0.010) 0.2920.013 (0.01150.0005) 1.910.10 (0.0750.004) 8 5 MAX 4.600.10 (0.1810.004) 4.780.10 (0.1880.004) Dimensions in mm (inches) www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (65) 6756 2394 India, Australia, New Zealand: (65) 6755 1939 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (65) 6755 2044 Taiwan: (65) 6755 1843 Data subject to change. Copyright (c) 2005 Agilent Technologies, Inc. January 14, 2005 5989-2075EN |
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